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  Datasheet File OCR Text:
 2SD880
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
!
Complement to 2SB834
TO-220
ABSOLUTE MAXIMUM RATINGS (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 60 60 7 3 30 150 -50~150
Unit V V V A W
o o
C C
ELECTRICAL CHARACTERISTICS (TA=25oC)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) fT
Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 5V , IC=0.5A VCE= 5V , IC=3A IC=3A , IB=0.3A VCE= 5V , IC=0.5A
Min
Typ
Max 100 100 300
Unit
A A
60 20 0.4 3
1.0
V MHZ
Wing Shing Computer Components Co., (H.K)Ltd. Homepage: http:/ /www.wingshing.com
TeL(852)2341 9276 Fax:(852)2797 8153 . e_ mail:wsccltd@hkstar.com


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